The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jul. 17, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Some embodiments of the present disclosure relates to a method of forming a semiconductor device having a strained channel and an associated device. In some embodiments, the method includes performing a first etching process by selectively exposing a substrate to a first etchant to produce a recess defined by sidewalls and a bottom surface of the substrate. An implantation process is performed to form an etch stop layer along the bottom surface. A second etching process is performed by exposing the sidewalls and the bottom surface defining the recess to a second etchant to form a source/drain recess. The source/drain recess laterally extends past the etch stop layer in opposing directions. A semiconductor material is formed within the source/drain recess.