Chao-Hsuing Chen

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao-Hsuing Chen. Retrieved from https://idiyas.com/inventor/chao-hsuing-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 41.2

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 53(Granted Patents)

Company Filing History:

17 out of 43,553

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2018

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Areas of Expertise:

Source/Drain Recess

Semiconductor Device

V-Shaped SiGe

Doped SiGe

ILD CMP Dishing

SRAM Cells

Butted Contact Resistance

Surface Profile

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10158004 - Source/drain recess volume trim for improved device performance and layout dependence (2018-12-18),

2. 9853149 - Floating grid and crown-shaping poly for improving ILD CMP dishing (2017-12-26),

3. 9831314 - Surface profile for semiconductor region (2017-11-28),

4. 9735252 - V-shaped SiGe recess volume trim for improved device performance and layout dependence (2017-08-15),

5. 9722082 - Methods and apparatus for doped SiGe source/drain stressor deposition (2017-08-01),

6. 9691903 - Semiconductor device and manufacturing method thereof (2017-06-27),

7. 9530889 - Semiconductor device and manufacturing method thereof (2016-12-27),

8. 9425313 - Semiconductor device and manufacturing method thereof (2016-08-23),

9. 9385215 - V-shaped SiGe recess volume trim for improved device performance and layout dependence (2016-07-05),

10. 9324836 - Methods and apparatus for doped SiGe source/drain stressor deposition (2016-04-26),

11. 9269812 - Semiconductor device having V-shaped region (2016-02-23),

12. 9196545 - SiGe SRAM butted contact resistance improvement (2015-11-24),

13. 9142642 - Methods and apparatus for doped SiGe source/drain stressor deposition (2015-09-22),

14. 9099421 - Surface profile for semiconductor region (2015-08-04),

15. 9053974 - SRAM cells with dummy insertions (2015-06-09),

Title: The Innovative Journey of Chao-Hsuing Chen

Introduction:

Chao-Hsuing Chen, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Chen's latest patents showcase his expertise in areas such as artificial intelligence, renewable energy, and sustainable technologies, solidifying his reputation as a forward-thinker in the industry.

Career Highlights:

Throughout his illustrious career, Chao-Hsuing Chen has been recognized for his pioneering work in developing cutting-edge solutions that have revolutionized various sectors. His commitment to innovation and problem-solving has led to the successful implementation of numerous projects that have had a lasting impact on society.

Collaborations:

Chen's collaborative efforts with leading research institutions, universities, and tech companies have been instrumental in bringing his ideas to life. By working closely with experts in the field, he has been able to leverage their knowledge and resources to further enhance his inventions.

Conclusion:

In conclusion, Chao-Hsuing Chen's relentless pursuit of innovation and his passion for creating a positive change in the world have established him as a trailblazer in the realm of technology. His remarkable achievements continue to inspire future generations of inventors and innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]