The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Aug. 03, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Hsuing Chen, Tainan, TW;
Hou-Yu Chen, Zhubei, TW;
Chie-Iuan Lin, Zhubei, TW;
Yuan-Shun Chao, Zhubei, TW;
Kuo Lung Li, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
In a method for manufacturing a semiconductor device, a fin structure including a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer is formed. An isolation insulating layer is formed so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer while the oxide layer and the first semiconductor layer are embedded in the isolation insulating layer. A third semiconductor layer is formed on the exposed second semiconductor layer so as to form a channel.