Chang Wan Ha

This inventor holds 65 USPTO granted patents and 4 published patent applications and 4 EPO patents, primarily in 3D NAND Memory (CPC class H01L). Top assignees: Micron Technology Incorporated, Intel Corporation, Intel Ndtm US LLC. Active years: 2006-2026.

USPTO Granted Patents = 65 (Patent Applications = 4)

% Patents Active = 95.4

EPO Patents = 4 (Patent Applications = 4)

Average Co-Inventor Count = 1.4

ph-index = 8

Forward Citations = 347(Granted Patents)

Forward Citations (Not Self Cited) = 322(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

51 out of 39,149

Micron Technology Incorporated

Sk Hynix Nand Product Solutions Corp.

patents

Years Active: 2006-2026

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Areas of Expertise:

3D NAND

Power Management

Read Operations

Defect Management

Non-Volatile Memory

Dynamic Data Caches

Memory Devices

Stair Step Structures

High Voltage Transistors

Program Verification

Column Address Decoding

Impedance Adjustment

65 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12699526 - Method and apparatus to select a plane in a NAND flash die to store a read-only reserved block (2026-08-04),

2. 12563725 - Parallel staircase 3D NAND (2026-02-24),

3. 12531110 - Synchronous independent plane read operation (2026-01-20),

4. 12340845 - Split block array for 3D NAND memory (2025-06-24),

5. 12315573 - Method and apparatus to reduce power consumption of page buffer circuitry in a non-volatile memory device (2025-05-27),

6. 12315567 - Grouped global wordline driver with shared bias scheme (2025-05-27),

7. 11653496 - Asymmetric junctions of high voltage transistor in NAND flash memory (2023-05-16),

8. 11500446 - Reducing power consumption in nonvolatile memory due to standby leakage current (2022-11-15),

9. 11429469 - Defective bit line management in connection with a memory access (2022-08-30),

10. 11393716 - Devices including stair step structures, and related apparatuses and memory devices (2022-07-19),

11. 10942799 - Defective bit line management in connection with a memory access (2021-03-09),

12. 10832766 - Program verification time reduction in non-volatile memory devices (2020-11-10),

13. 10748811 - Memory devices and related methods (2020-08-18),

14. 10468116 - Methods of operating a memory device (2019-11-05),

15. 10365703 - Power management (2019-07-30),

Title: Chang Wan Ha - Pioneering Inventor from San Ramon

Introduction: Chang Wan Ha is a distinguished inventor based in San Ramon, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chang Wan Ha holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and ingenuity in creating cutting-edge solutions.

Career Highlights: With a career spanning over two decades, Chang Wan Ha has worked with renowned tech companies, leading research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Chang Wan Ha has collaborated with top-notch engineers, scientists, and researchers, fostering a culture of innovation and excellence. His collaborative efforts have resulted in the development of disruptive technologies that have had a significant impact on various sectors.

Conclusion: Chang Wan Ha's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazing inventor in the vibrant tech hub of San Ramon, California. His work continues to inspire the next generation of inventors and innovators worldwide.