The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Sep. 28, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Richard Fastow, Cupertino, CA (US);

Shankar Natarajan, Folsom, CA (US);

Chang Wan Ha, San Ramon, CA (US);

Chee Law, Belmont, CA (US);

Khaled Hasnat, San Jose, CA (US);

Chuan Lin, Cupertino, CA (US);

Shafqat Ahmed, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/32 (2019.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); G11C 16/32 (2006.01); G11C 16/34 (2006.01); G06F 1/3234 (2019.01);
U.S. Cl.
CPC ...
G06F 1/3275 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01); G11C 16/3459 (2013.01);
Abstract

A nonvolatile memory supports a standby state where the memory is ready to receive an access command to execute, and a deep power down state where the memory ignores all access commands. The memory can transition from the standby state to the deep power down state in response to a threshold amount of time in the standby state. Thus, the memory can enter the standby state after a command and then transition to the deep power down state after the threshold time.


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