The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Sep. 25, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Chang Wan Ha, San Ramon, CA (US);
Chuan Lin, Cupertino, CA (US);
Deepak Thimmegowda, Fremont, CA (US);
Zengtao Liu, Eagle, ID (US);
Binh N. Ngo, Folsom, CA (US);
Soo-yong Park, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/1158 (2017.01); H01L 29/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1158 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); H01L 29/1033 (2013.01);
Abstract
The total silicon area used by a plurality of high voltage transistors in an array of NAND cells is reduced by modifying the silicon area layout such that the size of the source and drain of each of the plurality of high voltage transistors is dependent on the maximum voltage to be applied to each of the source and drain for the respective one of the plurality of high voltage transistors.