Soo-yong Park

Title: The Innovations of Soo-yong Park

Introduction

Soo-yong Park is a notable inventor based in San Jose, CA. He has made significant contributions to the field of non-volatile memory technology, holding 2 patents that showcase his expertise and innovative spirit.

Latest Patents

One of his latest patents is titled "Pump discharge sequence improvements in external power supply mode for pulse recovery phases in non-volatile memory." This technology includes a charge pump that applies a program voltage to selected wordlines in NAND memory. It also conducts a discharge of the program voltage while maintaining a connection between the selected wordlines and a pass voltage of the charge pump. This connection prevents the selected wordlines from floating during the discharge process. Another significant patent is "Asymmetric junctions of high voltage transistor in NAND flash memory." This invention reduces the total silicon area used by high voltage transistors in NAND cell arrays by modifying the layout of the silicon area, allowing the size of the source and drain of each transistor to depend on the maximum voltage applied.

Career Highlights

Soo-yong Park has worked with prominent companies in the technology sector, including SK Hynix NAND Product Solutions Corp. and Intel Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Soo-yong has collaborated with talented individuals such as Pranav Chava and Binh Ngo. These partnerships have contributed to the advancement of his projects and innovations.

Conclusion

Soo-yong Park is a distinguished inventor whose work in non-volatile memory technology has led to valuable patents and advancements in the field. His contributions continue to influence the industry and inspire future innovations.