The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Dec. 08, 2021
Applicant:

Intel Ndtm Us Llc, Santa Clara, CA (US);

Inventors:

Soo-yong Park, San Jose, CA (US);

Pranav Chava, Folsom, CA (US);

Binh Ngo, Folsom, CA (US);

Assignee:

SK Hynix NAND Product Solutions Corp., Rancho Cordova, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01);
Abstract

Systems, apparatuses and methods may provide for technology that includes a charge pump and applies a program voltage from the charge pump to selected wordlines in the NAND memory. The technology may also conduct a discharge of the program voltage from the charge pump and maintain a connection between the selected wordlines and a pass voltage of the charge pump while the program voltage is being discharged. In one example, the connection between the selected wordlines and the pass voltage prevents the selected wordlines from floating.


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