Folsom, CA, United States of America

Pranav Chava

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.5

ph-index = 1


Company Filing History:


Years Active: 2021-2025

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):

Title: Innovations of Pranav Chava

Introduction

Pranav Chava is an accomplished inventor based in Folsom, California. He has made significant contributions to the field of non-volatile memory technology, holding a total of five patents. His work focuses on improving the efficiency and functionality of memory systems.

Latest Patents

One of Pranav's latest patents is titled "Pump discharge sequence improvements in external power supply mode for pulse recovery phases in non-volatile memory." This technology involves a charge pump that applies a program voltage to selected wordlines in NAND memory. It also includes a method for discharging the program voltage while maintaining a connection between the selected wordlines and a pass voltage, preventing them from floating. Another notable patent is "Smart prologue for nonvolatile memory program operation." This innovation allows for a smart prologue operation that selectively applies a standard or accelerated program prologue to compute program parameters for target subblocks in NV storage media, enhancing the efficiency of the programming process.

Career Highlights

Pranav has worked with prominent companies in the technology sector, including Intel Corporation and Intel NDTM US LLC. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Pranav has collaborated with talented individuals such as Sagar Upadhyay and Aliasgar S Madraswala. These partnerships have contributed to the advancement of his projects and innovations.

Conclusion

Pranav Chava's contributions to non-volatile memory technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in memory systems and technology.

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