Company Filing History:
Years Active: 2000-2023
Title: Binh N Ngo: Innovator in Memory Technology
Introduction
Binh N Ngo is a prominent inventor based in Folsom, CA, known for his significant contributions to memory technology. He holds a total of 6 patents that showcase his innovative approach to enhancing memory systems.
Latest Patents
One of his latest patents is titled "Asymmetric junctions of high voltage transistor in NAND flash memory." This invention focuses on reducing the total silicon area used by high voltage transistors in NAND cell arrays. By modifying the silicon area layout, the size of the source and drain of each high voltage transistor is optimized based on the maximum voltage applied. Another notable patent is "System and method for performing a concurrent multiple page read of a memory array." This system facilitates multiple concurrent page reads in a memory array, allowing memory controllers to address and access multiple pages at different programming levels simultaneously.
Career Highlights
Binh N Ngo is currently employed at Intel Corporation, where he continues to push the boundaries of memory technology. His work has significantly impacted the efficiency and performance of memory systems, making him a valuable asset to the company.
Collaborations
Throughout his career, Binh has collaborated with notable colleagues, including Rupinder K Bains and Raymond W Zeng. These collaborations have further enriched his innovative endeavors in the field of memory technology.
Conclusion
Binh N Ngo's contributions to memory technology through his patents and work at Intel Corporation highlight his role as a leading inventor in the industry. His innovative solutions continue to shape the future of memory systems.