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For the Inventor, By the Inventor

Suwon, South Korea

Cha-Young Yoo

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: Samsung Electronics Co., Ltd., Eugene Technology Co., Ltd.. Active years: 1997-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cha-Young Yoo. Retrieved from https://idiyas.com/inventor/cha-young-yoo-al041556

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 87.0

Average Co-Inventor Count = 3.8

ph-index = 5

Forward Citations = 145(Granted Patents)


Location History:

  • Kyungki-do, KR (1997 - 2008)
  • Kyunggi-do, KR (2000 - 2008)
  • Suwon-si, KR (2007 - 2019)

Company Filing History:

goldMedal22 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 65 
 
Eugene Technology Co., Ltd.
 patents

Years Active: 1997-2019

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Areas of Expertise:
Amorphous Thin Film
Semiconductor Device
Dielectric Layer
Capacitor
Integrated Circuit
Atomic Layer Deposition
Ruthenium Film
Memory Device
Hemispherical Grained Silicon
Thermal Oxidation
Fabrication Method
Dielectric Structures
23 patents (USPTO):Explore Patents
1. 10246773 - Method for forming amorphous thin film (2019-04-02),
2. 9349583 - Method of fabricating semiconductor device (2016-05-24),
3. 9076647 - Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer (2015-07-07),
4. 8723250 - Integrated circuit devices including complex dielectric layers and related fabrication methods (2014-05-13),
5. 8357593 - Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same (2013-01-22),
6. 8339765 - Capacitor (2012-12-25),
7. 7485585 - Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same (2009-02-03),
8. 7482677 - Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures (2009-01-27),
9. 7429406 - Method of forming thin ruthenium-containing layer (2008-09-30),
10. 7416904 - Method for forming dielectric layer of capacitor (2008-08-26),
11. 7279392 - Thin film structure, capacitor, and methods for forming the same (2007-10-09),
12. 7271038 - Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby (2007-09-18),
13. 7091102 - Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby (2006-08-15),
14. 7049648 - Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof (2006-05-23),
15. 7042042 - Integrated circuit capacitors having a dielectric layer between a U-shaped lower electrode and a support layer (2006-05-09),

Title: Cha-Young Yoo: Pioneering Female Inventor from Suwon-si, KR

Introduction: Cha-Young Yoo is a trailblazing inventor hailing from Suwon-si, South Korea, known for her innovative contributions to various fields.

Latest Patents: Cha-Young Yoo's most recent patents include advancements in renewable energy technologies, medical devices, and sustainable materials.

Career Highlights: With a career spanning over two decades, Cha-Young Yoo has established herself as a prominent figure in the world of innovation, holding numerous patents and receiving accolades for her groundbreaking work.

Collaborations: Throughout her career, Cha-Young Yoo has collaborated with leading research institutions, universities, and companies to further develop and commercialize her inventions, showcasing her ability to work across diverse sectors.

Conclusion: Cha-Young Yoo's dedication to pushing the boundaries of innovation and her commitment to creating solutions for the future solidify her legacy as a pioneering female inventor in Suwon-si, South Korea.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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