The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Feb. 01, 2005
Seung-hwan Lee, Seoul, KR;
Kyoung-ryul Yoon, Goyang-si, KR;
Han-mei Choi, Seoul, KR;
Dae-sik Choi, Seoul, KR;
Ki-yeon Park, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Suwon-si, KR;
Cha-young Yoo, Suwon-si, KR;
Seung-Hwan Lee, Seoul, KR;
Kyoung-Ryul Yoon, Goyang-si, KR;
Han-Mei Choi, Seoul, KR;
Dae-Sik Choi, Seoul, KR;
Ki-Yeon Park, Seoul, KR;
Sung-Tae Kim, Seoul, KR;
Young-Sun Kim, Suwon-si, KR;
Cha-Young Yoo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the first film to suppress crystallization of the first film. A capacitor may include a dielectric layer, which may further include the first thin film and the second thin film.