The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 19, 2003
Applicants:
Han-jin Lim, Seoul, KR;
Kwang-hee Lee, Seoul, KR;
Suk-jin Chung, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Wan-don Kim, Kyungki-o, KR;
Jin-il Lee, Kyungki-do, KR;
Inventors:
Han-jin Lim, Seoul, KR;
Kwang-hee Lee, Seoul, KR;
Suk-jin Chung, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Wan-don Kim, Kyungki-o, KR;
Jin-il Lee, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on the lower electrode, and an upper electrode on the dielectric. A hydrogen barrier insulation layer is formed on the upper electrode and a hydrogen barrier spacer is formed on a sidewall of the capacitor.