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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Suk-Jin Chung

USPTO Granted Patents = 13

Average Co-Inventor Count = 5.3

ph-index = 3

Forward Citations = 41(Granted Patents)


Location History:

  • Kyungki-do, KR (2006 - 2008)
  • Gyeonggi-do, KR (2007 - 2012)
  • Hwaseong-si, KR (2012 - 2017)

Company Filing History:

goldMedal13 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2017

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13 patents (USPTO):Explore Patents
1. 9685498 - Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same (2017-06-20),
2. 9412583 - Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same (2016-08-09),
3. 9076647 - Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer (2015-07-07),
4. 8318560 - Methods of forming integrated circuit devices including a capacitor (2012-11-27),
5. 8264026 - Nonvolatile memory devices and methods of manufacturing the same (2012-09-11),
6. 7842581 - Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers (2010-11-30),
7. 7531861 - Trench capacitors with insulating layer collars in undercut regions (2009-05-12),
8. 7416904 - Method for forming dielectric layer of capacitor (2008-08-26),
9. 7361548 - Methods of forming a capacitor using an atomic layer deposition process (2008-04-22),
10. 7354821 - Methods of fabricating trench capacitors with insulating layer collars in undercut regions (2008-04-08),
11. 7271055 - Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors (2007-09-18),
12. 7091102 - Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby (2006-08-15),
13. 7034350 - Capacitors including a cavity containing a buried layer (2006-04-25),

Title: Suk-Jin Chung: Innovator in Semiconductor Technology

Introduction

Suk-Jin Chung is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on methods of forming dielectric layers and manufacturing semiconductor devices, which are crucial for the advancement of electronic components.

Latest Patents

Chung's latest patents involve innovative methods for forming dielectric layers. These methods utilize an organometallic precursor that is adsorbed onto a substrate within a process chamber. The organometallic precursor consists of a central metal and ligands that are bound to it. An inactive oxidant is introduced to the substrate, which reacts with the organometallic precursor. Additionally, an active oxidant is provided, which has a higher reactivity than the inactive oxidant. This dual oxidant approach enhances the efficiency of the dielectric layer formation process.

Career Highlights

Suk-Jin Chung is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves research and development in semiconductor manufacturing processes, where he applies his expertise to create innovative solutions that improve product performance and reliability.

Collaborations

Chung has collaborated with notable colleagues, including Jae-Soon Lim and Kwang-Hee Lee. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Suk-Jin Chung's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative methods for forming dielectric layers are paving the way for advancements in electronic devices.

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