The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Nov. 12, 2002
Jae-hyoung Choi, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Suk-jin Chung, Kyungki-do, KR;
Wan-don Kim, Kyungki-do, KR;
Jae-Hyoung Choi, Kyungki-do, KR;
Cha-Young Yoo, Kyungki-do, KR;
Suk-Jin Chung, Kyungki-do, KR;
Wan-Don Kim, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A fabrication method for forming a semiconductor device having a capacitor is provided. A capacitor dielectric layer is formed by depositing a first layer and a second layer. The second layer is a major portion of the capacitor dielectric layer. The first layer acts as a seed layer, while the second layer is expitaxially grown. The material of the second layer as deposited is partially crystal. Nuclear generation and crystal growth occur separately so that the crystalline characteristic of the capacitor dielectric layer and the capacitance characteristic of the capacitor are enhanced. Moreover, the capacitor dielectric layer is crystallized at a relatively low temperature or for a relatively short time, thereby reducing leakage current as well as reducing deformation in the lower electrode. Optionally, The material of the second layer as deposited is not partially crystal but amorphous.