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Kyungki-do, South Korea

Wan-Don Kim

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 41(Granted Patents)

Location History:

Seoul, KR (2000)
Kyungki-do, KR (2002 - 2008)
Gyeonggi-do, KR (2010 - 2012)

Company Filing History:

15 out of 131,744

Samsung Electronics Co., Ltd.

Years Active: 2000-2012

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8318560 - Methods of forming integrated circuit devices including a capacitor (2012-11-27),

2. 7842581 - Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers (2010-11-30),

3. 7781819 - Semiconductor devices having a contact plug and fabrication methods thereof (2010-08-24),

4. 7416904 - Method for forming dielectric layer of capacitor (2008-08-26),

5. 7034350 - Capacitors including a cavity containing a buried layer (2006-04-25),

6. 6982205 - Method and manufacturing a semiconductor device having a metal-insulator-metal capacitor (2006-01-03),

7. 6946341 - Methods for manufacturing storage nodes of stacked capacitors (2005-09-20),

8. 6884673 - Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitor (2005-04-26),

9. 6762091 - Methods for manufacturing semiconductor devices having a metal layer (2004-07-13),

10. 6743678 - Methods for manufacturing semiconductor memory devices (2004-06-01),

11. 6677217 - Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps (2004-01-13),

12. 6649502 - Methods of forming multilayer dielectric regions using varied deposition parameters (2003-11-18),

13. 6613629 - Methods for manufacturing storage nodes of stacked capacitors (2003-09-02),

14. 6472319 - Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment (2002-10-29),

15. 6090704 - Method for fabricating a high dielectric capacitor (2000-07-18),

Title: Wan-Don Kim: Pioneering Innovator in Integrated Circuit Technology

Introduction: Wan-Don Kim, a distinguished inventor hailing from Kyungki-do, KR, has made significant contributions in the realm of integrated circuit technology. With 15 patents to his name, Kim's innovative spirit and dedication to pushing boundaries stand as a beacon of inspiration for inventors worldwide.

Latest Patents: Among Wan-Don Kim's latest patents are groundbreaking methods for forming integrated circuit devices, including capacitors. These patents involve techniques to enhance the efficiency and functionality of capacitors within integrated circuit substrates, showcasing Kim's expertise in cutting-edge technologies.

Career Highlights: Working at Samsung Electronics Co., Ltd., Wan-Don Kim has solidified his position as a key figure in the field of semiconductor innovation. His relentless pursuit of excellence has led to the development of novel solutions that have revolutionized the industry.

Collaborations: Kim's success is also attributed to his collaborations with esteemed colleagues such as Cha-young Yoo and Jae-Hyun Joo. Together, they have synergized their skills and expertise to drive forward groundbreaking research and development initiatives in the world of integrated circuits.

Conclusion: Wan-Don Kim's remarkable journey as an inventor underscores the transformative power of innovation. His pioneering work in integrated circuit technology continues to shape the landscape of the industry, leaving an indelible mark on the world of inventions.

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