The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Feb. 28, 2007
Applicants:
Wan-don Kim, Gyeonggi-do, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Suk-jin Chung, Gyeonggi-do, KR;
Jin-yong Kim, Seoul, KR;
Inventors:
Wan-Don Kim, Gyeonggi-do, KR;
Cha-Young Yoo, Gyeonggi-do, KR;
Suk-Jin Chung, Gyeonggi-do, KR;
Jin-Yong Kim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a capacitor of an integrated circuit device include forming a lower electrode of the capacitor on an integrated circuit substrate without exposing a contact plug to be coupled to the lower electrode. A supporting conductor is formed coupling the lower electrode to the contact plug after forming the lower electrode. A capacitor dielectric layer is formed on the lower electrode and an upper electrode of the capacitor is formed on the capacitor dielectric layer.