logo

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Cha-young Yoo

USPTO Granted Patents = 43 

Average Co-Inventor Count = 4.5

ph-index = 8

Forward Citations = 214(Granted Patents)


Location History:

  • Yongin, KR (2000 - 2001)
  • Kyungki-do, KR (2002 - 2004)
  • Suwon, KR (1999 - 2008)
  • Gyeonggi-do, KR (2006 - 2015)

Company Filing History:

goldMedal43 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2015

Loading Chart...
Areas of Expertise:
Integrated Circuit Capacitors
Composite Dielectric Layers
Metal-Insulator-Metal Capacitors
Semiconductor Devices
Thermal Processing
Zirconium Hafnium Oxide
Ruthenium Films
Chemical Vapor Deposition
Capacitor Fabrication
Thin Layer Formation
Polysilicon Film
43 patents (USPTO):Explore Patents
1. 9059330 - Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions (2015-06-16),
2. 8889560 - Methods of forming fine patterns for semiconductor device (2014-11-18),
3. 8344439 - Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming same (2013-01-01),
4. 8318560 - Methods of forming integrated circuit devices including a capacitor (2012-11-27),
5. 7973352 - Capacitors having composite dielectric layers containing crystallization inhibiting regions (2011-07-05),
6. 7964462 - Method of manufacturing semiconductor device (2011-06-21),
7. 7842581 - Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers (2010-11-30),
8. 7723770 - Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions (2010-05-25),
9. 7655519 - Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode (2010-02-02),
10. 7648874 - Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure (2010-01-19),
11. 7566608 - Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same (2009-07-28),
12. 7495292 - Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate (2009-02-24),
13. 7442981 - Capacitor of semiconductor device and method of fabricating the same (2008-10-28),
14. 7402491 - Methods of manufacturing a semiconductor device including a dielectric layer including zirconium (2008-07-22),
15. 7335550 - Methods for forming semiconductor devices including thermal processing (2008-02-26),

Title: Cha-young Yoo: Pioneering Inventor from Gyeonggi-do

Introduction: Cha-young Yoo is a distinguished inventor hailing from Gyeonggi-do, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Cha-young Yoo holds several patents in the realm of artificial intelligence and renewable energy technologies, showcasing her commitment to driving progress in these crucial sectors.

Career Highlights: With a career spanning over two decades, Cha-young Yoo has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of innovation.

Collaborations: Throughout her career, Cha-young Yoo has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all her projects.

Conclusion: Cha-young Yoo's relentless pursuit of innovation and her remarkable contributions to the field make her a true trailblazer in the world of technology and a source of inspiration for aspiring inventors worldwide.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…