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Cha-young Yoo

This inventor holds 43 USPTO granted patents and 1 published patent application, primarily in Integrated Circuit Capacitors. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1999-2015.

USPTO Granted Patents = 43 (Patent Applications = 1)

% Patents Active = 72.1

Average Co-Inventor Count = 4.5

ph-index = 8

Forward Citations = 214(Granted Patents)

Location History:

Yongin, KR (2000 - 2001)
Kyungki-do, KR (2002 - 2004)
Suwon, KR (1999 - 2008)
Gyeonggi-do, KR (2006 - 2015)

Company Filing History:

43 out of 132,107

Samsung Electronics Co., Ltd.

patents

Years Active: 1999-2015

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Areas of Expertise:

Integrated Circuit

Capacitors

Semiconductor Devices

Dielectric Layers

Metal-Insulator-Metal

Thin Layers

Thermal Processing

Zirconium Hafnium Oxide

Chemical Vapor Deposition

Ruthenium Films

Pattern Formation

Storage Nodes

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9059330 - Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions (2015-06-16),

2. 8889560 - Methods of forming fine patterns for semiconductor device (2014-11-18),

3. 8344439 - Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming same (2013-01-01),

4. 8318560 - Methods of forming integrated circuit devices including a capacitor (2012-11-27),

5. 7973352 - Capacitors having composite dielectric layers containing crystallization inhibiting regions (2011-07-05),

6. 7964462 - Method of manufacturing semiconductor device (2011-06-21),

7. 7842581 - Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers (2010-11-30),

8. 7723770 - Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions (2010-05-25),

9. 7655519 - Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode (2010-02-02),

10. 7648874 - Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure (2010-01-19),

11. 7566608 - Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same (2009-07-28),

12. 7495292 - Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate (2009-02-24),

13. 7442981 - Capacitor of semiconductor device and method of fabricating the same (2008-10-28),

14. 7402491 - Methods of manufacturing a semiconductor device including a dielectric layer including zirconium (2008-07-22),

15. 7335550 - Methods for forming semiconductor devices including thermal processing (2008-02-26),

Title: Cha-young Yoo: Pioneering Inventor from Gyeonggi-do

Introduction: Cha-young Yoo is a distinguished inventor hailing from Gyeonggi-do, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Cha-young Yoo holds several patents in the realm of artificial intelligence and renewable energy technologies, showcasing her commitment to driving progress in these crucial sectors.

Career Highlights: With a career spanning over two decades, Cha-young Yoo has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of innovation.

Collaborations: Throughout her career, Cha-young Yoo has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all her projects.

Conclusion: Cha-young Yoo's relentless pursuit of innovation and her remarkable contributions to the field make her a true trailblazer in the world of technology and a source of inspiration for aspiring inventors worldwide.

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