The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Nov. 22, 2005
Dae-sik Choi, Seoul, KR;
Kyoung-ryul Yoon, Gyeonggi-do, KR;
Han-mei Choi, Seoul, KR;
Ki-yeon Park, Gyeonggi-do, KR;
Seung-hwan Lee, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Dae-Sik Choi, Seoul, KR;
Kyoung-Ryul Yoon, Gyeonggi-do, KR;
Han-Mei Choi, Seoul, KR;
Ki-Yeon Park, Gyeonggi-do, KR;
Seung-Hwan Lee, Seoul, KR;
Sung-Tae Kim, Seoul, KR;
Young-Sun Kim, Gyeonggi-do, KR;
Cha-Young Yoo, Gyeonggi-do, KR;
Abstract
Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(CH)(CH)}], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(CH)(CH)}], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.