The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Oct. 28, 2005
Han-mei Choi, Seoul, KR;
Kyoung-ryul Yoon, Gyeonggi-do, KR;
Seung-hwan Lee, Seoul, KR;
Ki-yeon Park, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Han-Mei Choi, Seoul, KR;
Kyoung-Ryul Yoon, Gyeonggi-do, KR;
Seung-Hwan Lee, Seoul, KR;
Ki-Yeon Park, Seoul, KR;
Sung-Tae Kim, Seoul, KR;
Young-Sun Kim, Gyeonggi-do, KR;
Cha-Young Yoo, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.