The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Nov. 13, 2008
Dong-chul Yoo, Gyeonggi-do, KR;
Han-mei Choi, Seoul, KR;
Kwang-hee Lee, Seoul, KR;
Kyong-won an, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Dong-chul Yoo, Gyeonggi-do, KR;
Han-mei Choi, Seoul, KR;
Kwang-hee Lee, Seoul, KR;
Kyong-won An, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.