The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
May. 18, 2012
Applicants:
Byung-hong Chung, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Dong-hyun Kim, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 27/108 (2006.01); H01L 21/308 (2006.01); H01L 27/02 (2006.01); H01L 27/115 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 27/11568 (2013.01); H01L 21/0338 (2013.01); H01L 27/10888 (2013.01); H01L 21/0217 (2013.01); H01L 21/3088 (2013.01); H01L 27/10891 (2013.01); H01L 21/31116 (2013.01); H01L 21/0228 (2013.01); H01L 27/0207 (2013.01); H01L 21/3086 (2013.01); H01L 21/0337 (2013.01);
Abstract
Methods of forming fine patterns for a semiconductor device include forming a hard mask layer on an etch target layer; forming a carbon containing layer on the hard mask layer; forming carbon containing layer patterns by etching the carbon containing layer; forming spacers covering opposing side walls of each of the carbon containing layer patterns; removing the carbon containing layer patterns; forming hard mask patterns by etching the hard mask layer using the spacers as a first etching mask; and etching the etch target layer by using the hard mask patterns a second etching mask.