The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Nov. 13, 2008
Wan-don Kim, Gyeonggi-do, KR;
Jin-yong Kim, Seoul, KR;
Yong-suk Tak, Seoul, KR;
Jung-hee Chung, Gyeonggi-do, KR;
Ki-chul Kim, Gyeonggi-do, KR;
Oh-seong Kwon, Gyeonggi-do, KR;
Wan-don Kim, Gyeonggi-do, KR;
Jin-yong Kim, Seoul, KR;
Yong-suk Tak, Seoul, KR;
Jung-hee Chung, Gyeonggi-do, KR;
Ki-chul Kim, Gyeonggi-do, KR;
Oh-seong Kwon, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hole. A second contact plug buries the contact hole and is formed on the first contact plug. A conductive layer is connected to the first contact plug and the second contact plug. The bottom thickness of the first contact plug formed on the bottom of the contact hole is thicker than the inner wall thickness of the first contact plug formed on the inner wall of the contact hole.