The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Aug. 07, 2002
Wan-don Kim, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Jae-hyun Joo, Seoul, KR;
Seok-jun Won, Seoul, JP;
Abstract
Methods for manufacturing a node of a stacked capacitor are provided. A first dielectric layer having a contact plug therein is formed on an integrated circuit substrate. A second dielectric layer including a storage node hole adjacent the contact plug is formed on the first dielectric layer. A conductive layer is deposited into the storage node hole and on the second dielectric layer. The conductive layer on the second dielectric layer is removed to provide a conductive storage node in the storage node hole. After the conductive layer on the second dielectric layer is removed, the conductive storage node is heat treated to reflow the conductive storage node before additional layers are formed on the conductive storage node.