The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Mar. 05, 2004
Suk-jin Chung, Kyungki-do, KR;
Wan-don Kim, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Kwang-hee Lee, Seoul, KR;
Han-jin Lim, Seoul, KR;
Jin-il Lee, Kyungki-do, KR;
Suk-jin Chung, Kyungki-do, KR;
Wan-don Kim, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Kwang-hee Lee, Seoul, KR;
Han-jin Lim, Seoul, KR;
Jin-il Lee, Kyungki-do, KR;
Abstract
Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O) when initially formed.