Methods for manufacturing storage nodes of stacked capacitors

Abstract

Methods for forming a stacked capacitor include forming a first dielectric layer having a contact plug therein on an integrated circuit substrate. A second dielectric layer including a storage node hole is formed adjacent the contact plug on the first dielectric layer. A conductive layer is deposited into the storage node hole and on the second dielectric layer. The conductive layer has an associated work function. The conductive layer is oxidized to form a conductive oxide layer on the conductive layer. The conductive oxide layer has an associated work function that is sufficiently close to the work function of the conductive layer that the conductive layer and the conductive oxide layer operate together as the node of the stacked capacitor. The second dielectric layer is removed to define the node of the stacked capacitor. The stacked capacitor may be a metal-insulator-metal (MIM) capacitor and the conductive layer may be formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir). Related structures (devices) are also disclosed.