The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Apr. 28, 2012
Suk-jin Chung, Hwaseong-si, KR;
Youn-soo Kim, Yongin-si, KR;
Cha-young Yoo, Suwon-si, KR;
Jong-cheol Lee, Seoul, KR;
Sang-yeol Kang, Suwon-si, KR;
Suk-jin Chung, Hwaseong-si, KR;
Youn-soo Kim, Yongin-si, KR;
Cha-young Yoo, Suwon-si, KR;
Jong-cheol Lee, Seoul, KR;
Sang-yeol Kang, Suwon-si, KR;
Abstract
A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.