The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Dec. 01, 2009
Hoon-sang Choi, Seoul, KR;
Ki-vin Im, Seongnam-si, KR;
Se-hoon OH, Hwaseong-si, KR;
Sang-yeol Kang, Seoul, KR;
Cha-young Yoo, Suwon-si, KR;
Hoon-Sang Choi, Seoul, KR;
Ki-Vin Im, Seongnam-si, KR;
Se-Hoon Oh, Hwaseong-si, KR;
Sang-Yeol Kang, Seoul, KR;
Cha-Young Yoo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.