The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

May. 09, 2016
Applicant:

Eugene Technology Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Seung-Woo Shin, Hwaseong-si, KR;

Cha-Young Yoo, Suwon-si, KR;

Woo-Duck Jung, Suwon-si, KR;

Ho-Min Choi, Yongin-si, KR;

Wan-Suk Oh, Icheon-si, KR;

Koon-Woo Lee, Yongin-si, KR;

Hyuk-Lyong Gwon, Siheung-si, KR;

Ki-Ho Kim, Asan-si, KR;

Assignee:

EUGENE TECHNOLOGY CO., LTD., Yongin-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/38 (2006.01); H01L 21/3205 (2006.01); C23C 16/42 (2006.01); H01L 21/02 (2006.01); C23C 16/22 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C23C 16/38 (2013.01); C23C 16/22 (2013.01); C23C 16/24 (2013.01); C23C 16/42 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02592 (2013.01); H01L 21/3205 (2013.01); B82Y 40/00 (2013.01);
Abstract

A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.


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