The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Mar. 15, 2004
Applicants:
Seok-jun Won, Seoul, KR;
Cha-young Yoo, Kyungki-do, KR;
Inventors:
Seok-jun Won, Seoul, KR;
Cha-young Yoo, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8242 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.