The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 25, 2013
Min-young Park, Seoul, KR;
Youn-soo Kim, Yongin-si, KN;
Sang-yeol Kang, Suwon-si, KR;
Cha-young Yoo, Suwon-si, KR;
Jae-soon Lim, Seoul, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Min-Young Park, Seoul, KR;
Youn-Soo Kim, Yongin-si, KN;
Sang-Yeol Kang, Suwon-si, KR;
Cha-Young Yoo, Suwon-si, KR;
Jae-Soon Lim, Seoul, KR;
Jae-Hyoung Choi, Hwaseong-si, KR;
Samsung Electronis Co., Ltd., , KR;
Abstract
Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.