The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Dec. 16, 2004
Applicants:
Soon-yeon Park, Daegu-shi, KR;
Cha-young Yoo, Kyunggi-do, KR;
Seok-jun Won, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 1/36 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant deposition pressure. The two-step CVD process includes forming a seed layer and forming a main layer, each of which is performed under a different process condition of a deposition temperature, an oxygen flow rate, and a deposition pressure.