The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Mar. 10, 2006
Young-geun Park, Suwon-si, KR;
Jae-hyun Yeo, Bucheon-si, KR;
Eun-ae Chung, Suwon-si, KR;
Ki-vin Im, Suwon-si, KR;
Young-sun Kim, Suwon-si, KR;
Sung-tae Kim, Seoul, KR;
Cha-young Yoo, Suwon-si, KR;
Young-Geun Park, Suwon-si, KR;
Jae-Hyun Yeo, Bucheon-si, KR;
Eun-Ae Chung, Suwon-si, KR;
Ki-Vin Im, Suwon-si, KR;
Young-Sun Kim, Suwon-si, KR;
Sung-Tae Kim, Seoul, KR;
Cha-Young Yoo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.