Suwon, South Korea

Eun-Ae Chung

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eun-Ae Chung. Retrieved from https://idiyas.com/inventor/eun-ae-chung-fsg0himt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 6.5

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2009

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2 patents (USPTO):Explore Patents

Title: Eun-Ae Chung: Innovator in Capacitor Structures

Introduction

Eun-Ae Chung is a prominent inventor based in Suwon-si, South Korea. She has made significant contributions to the field of electronics, particularly in the development of advanced capacitor structures. With a total of 2 patents, her work has garnered attention in the industry.

Latest Patents

Eun-Ae Chung's latest patents include innovative methods for forming capacitor structures that incorporate aluminum oxide diffusion barriers. One of her notable inventions describes a multilayer electrode structure featuring a conductive layer made of aluminum, an oxide layer formed on this conductive layer, and an oxygen diffusion barrier layer. The oxide layer consists of zirconium oxide and/or titanium oxide, while the oxygen diffusion barrier layer is created at the interface between the conductive layer and the oxide layer through the re-oxidization of the oxide layer, which includes aluminum oxide.

Another significant patent involves a method of forming a thin film, as well as methods for manufacturing a gate structure and a capacitor. In this process, a hafnium precursor containing one alkoxy group and three amino groups, along with an oxidizing agent, is applied to a substrate. The reaction between the hafnium precursor and the oxidizing agent results in the formation of a thin film comprising hafnium oxide on the substrate. This hafnium precursor can be utilized for creating a gate insulation layer in transistors or a dielectric layer in capacitors.

Career Highlights

Eun-Ae Chung is currently employed at Samsung Electronics Co., Ltd., where she continues to push the boundaries of innovation in electronic components. Her work has been instrumental in enhancing the performance and efficiency of capacitor technologies.

Collaborations

Eun-Ae has collaborated with notable colleagues, including Ki-Vin Im and Jae-Hyun Yeo, contributing to a dynamic research environment that fosters innovation.

Conclusion

Eun-Ae Chung's contributions to the field of electronics, particularly in capacitor technology, highlight her role as a leading inventor. Her innovative patents and ongoing work at Samsung Electronics Co., Ltd. continue to shape the future of electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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