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For the Inventor, By the Inventor

Bucheon-si, South Korea

Jae-Hyun Yeo

USPTO Granted Patents = 19

Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 745(Granted Patents)


Location History:

  • Seoul, KR (2005 - 2006)
  • Bucheun-si, KR (2007)
  • Incheon-si, KR (2007)
  • Incheon, KR (2005 - 2008)
  • Gyeonggi-do, KR (2008 - 2010)
  • Bucheon-si, KR (2006 - 2018)

Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2018

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19 patents (USPTO):
1. 10049943 - Methods of manufacturing a semiconductor device (2018-08-14),
2. 8399364 - Methods of fabricating semiconductor devices including multilayer dielectric layers (2013-03-19),
3. 7791125 - Semiconductor devices having dielectric layers and methods of forming the same (2010-09-07),
4. 7648874 - Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure (2010-01-19),
5. 7514315 - Methods of forming capacitor structures having aluminum oxide diffusion barriers (2009-04-07),
6. 7485585 - Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same (2009-02-03),
7. 7482677 - Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures (2009-01-27),
8. 7442981 - Capacitor of semiconductor device and method of fabricating the same (2008-10-28),
9. 7425514 - Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same (2008-09-16),
10. 7273822 - Methods and apparatus for forming thin films for semiconductor devices (2007-09-25),
11. 7201943 - Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material (2007-04-10),
12. 7151039 - Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same (2006-12-19),
13. 7118975 - Method for manufacturing a semiconductor device (2006-10-10),
14. 7094712 - [object Object] (2006-08-22),
15. 7087482 - Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same (2006-08-08),

Title: Jae-Hyun Yeo: Pioneering Inventor from Bucheon-si, KR

Introduction: Jae-Hyun Yeo is a distinguished inventor hailing from Bucheon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yeo's recent patents focus on advancements in wearable technology, particularly in the healthcare sector, revolutionizing how individuals monitor and manage their well-being on a daily basis.

Career Highlights: With a career spanning over two decades, Jae-Hyun Yeo has held key roles in various research institutions and tech companies, driving forward cutting-edge projects that have significantly impacted the industry.

Collaborations: Yeo has collaborated with leading universities and medical centers to combine his expertise in technology with the latest developments in healthcare, resulting in innovative solutions that have the potential to improve countless lives.

Conclusion: Jae-Hyun Yeo's relentless passion for innovation and his commitment to pushing the boundaries of what is possible make him a true trailblazer in the world of inventors, with a legacy that will continue to inspire future generations.

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