The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Feb. 02, 2011
Applicants:
Kil-chul Kim, Seongnam-si, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Im, Seongnam-si, KR;
Jae-hyun Yeo, Bucheon-si, KR;
Inventors:
Kil-chul Kim, Seongnam-si, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Im, Seongnam-si, KR;
Jae-hyun Yeo, Bucheon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/471 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.