The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Jul. 10, 2003
Jae-hyun Yeo, Incheon, KR;
Young-sun Kim, Suwon-si, KR;
Sung-tae Kim, Seoul, KR;
In-sung Park, Seoul, KR;
Gi-vin Im, Suwon, KR;
Jae-Hyun Yeo, Incheon, KR;
Young-Sun Kim, Suwon-si, KR;
Sung-Tae Kim, Seoul, KR;
In-Sung Park, Seoul, KR;
Gi-Vin Im, Suwon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.