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Seoul, South Korea

In-Sung Park

This inventor holds 22 USPTO granted patents and 2 published patent applications, primarily in Atomic Layer Deposition. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: In-Sung Park. Retrieved from https://idiyas.com/inventor/in-sung-park-c0tjlow5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 68.2

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 803(Granted Patents)


Company Filing History:

goldMedal22 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2011

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Areas of Expertise:
Atomic Layer Deposition
Semiconductor Capacitors
Metal Oxide Films
High Dielectric Constants
Microelectronic Capacitors
Tantalum Oxide
Capacitor Manufacturing
Integrated Circuits
Dielectric Layer
Rapid Thermal Oxidation
Electrode Structures
Layer Deposition Methods
22 patents (USPTO):Explore Patents
1. 8039054 - Layer deposition methods (2011-10-18),
2. 7425514 - Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same (2008-09-16),
3. 7217669 - Method of forming a metal oxide film (2007-05-15),
4. 7201943 - Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material (2007-04-10),
5. 7201807 - [object Object] (2007-04-10),
6. 7151039 - Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same (2006-12-19),
7. 7094712 - [object Object] (2006-08-22),
8. 7087482 - Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same (2006-08-08),
9. 6946342 - Semiconductor device and method for manufacturing the same (2005-09-20),
10. 6919243 - Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereof (2005-07-19),
11. 6897106 - Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same (2005-05-24),
12. 6884675 - Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same (2005-04-26),
13. 6800570 - Method of forming a metal oxide film (2004-10-05),
14. 6734480 - Semiconductor capacitors having tantalum oxide layers (2004-05-11),
15. 6426308 - Methods for forming films having high dielectric constants (2002-07-30),

Title: In-Sung Park: A Trailblazer in Innovation

Introduction:

In-Sung Park, a visionary inventor based in Seoul, KR, has been at the forefront of technological advancements with a remarkable portfolio of 22 patents. His relentless pursuit of innovation and passion for pushing boundaries have made him a true pioneer in the world of technology, inspiring countless aspiring inventors worldwide.

Latest Patents:

Among his latest patents are groundbreaking inventions such as layer deposition methods and methods of forming materials using atomic layer deposition. These patents showcase his expertise in developing cutting-edge technologies that have the potential to revolutionize various industries.

Career Highlights:

In-Sung Park is currently a key figure at Samsung Electronics Co., Ltd., a global leader in technology and innovation. His role at Samsung has allowed him to spearhead projects that have significantly contributed to the company's success and reputation for excellence in the tech industry.

Collaborations:

Throughout his career, In-Sung Park has collaborated with talented individuals like Jae-Hyun Yeo and Sung-Tae Kim. These collaborations have led to the creation of innovative solutions and technologies that have further cemented his status as a visionary inventor.

Conclusion:

In-Sung Park's extraordinary career journey is a testament to his unwavering commitment to innovation and his ability to transform creative ideas into tangible solutions. His impact on the world of technology is profound, and his contributions continue to inspire and shape the future of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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