The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jan. 09, 2002
Applicants:
Jeong-hee Chung, Seoul, KR;
In-sung Park, Seoul, KR;
Jae-hyun Yeo, Incheon, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract
An integrated circuit capacitor is manufactured by forming a lower electrode on a substrate and forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor is used as a source gas and the metal precursor comprises oxygen. A dielectric layer is then formed on the metal preprocessed layer and an upper electrode is formed on the dielectric layer. The metal preprocessed layer may reduce oxidation of the lower electrode due to oxygen supplied during formation of the dielectric layer.