The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Jun. 02, 2003
Jae-hyun Yeo, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Suwon, KR;
In-sung Park, Seoul, KR;
Seok-jun Won, Seoul, KR;
Yun-jung Lee, Seoul, KR;
Ki-vin Im, Suwon, KR;
Ki-yeon Park, Seoul, KR;
Jae-Hyun Yeo, Seoul, KR;
Sung-Tae Kim, Seoul, KR;
Young-Sun Kim, Suwon, KR;
In-Sung Park, Seoul, KR;
Seok-Jun Won, Seoul, KR;
Yun-Jung Lee, Seoul, KR;
Ki-Vin Im, Suwon, KR;
Ki-Yeon Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.