The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Nov. 12, 2003
Ki-yeon Park, Kyungki-do, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Kyungki-do, KR;
In-sung Park, Seoul, KR;
Jae-hyun Yeo, Seoul, KR;
Ki-vin Im, Kyungki-do, KR;
Ki-Yeon Park, Kyungki-do, KR;
Sung-Tae Kim, Seoul, KR;
Young-Sun Kim, Kyungki-do, KR;
In-Sung Park, Seoul, KR;
Jae-Hyun Yeo, Seoul, KR;
Ki-Vin Im, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device that includes a composite AlO/HfOdielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an AlOdielectric layer and an HfOdielectric layer sequentially formed on the lower electrode, the AlOdielectric layer having a thickness greater than or equal to the HfOdielectric layer, and an upper electrode formed on the composite dielectric layer. The AlOdielectric layer has a thickness of 30-60 Å. The HfOdielectric layer has a thickness of 40 Å or less.