The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jul. 27, 2007
Applicants:
Hoon-sang Choi, Seoul, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Im, Gyeonggi-do, KR;
Jae-hyun Yeo, Gyeonggi-do, KR;
Eun-ae Chung, Seoul, KR;
Sang-yeol Kang, Gyeonggi-do, KR;
Inventors:
Hoon-Sang Choi, Seoul, KR;
Jong-Cheol Lee, Seoul, KR;
Ki-Vin Im, Gyeonggi-do, KR;
Jae-Hyun Yeo, Gyeonggi-do, KR;
Eun-Ae Chung, Seoul, KR;
Sang-Yeol Kang, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device includes loading a semiconductor substrate into a reaction chamber, and providing metal organic precursors including hafnium and zirconium into the reaction chamber to form hafnium-zirconium oxide (HfZrO; 0<X<1) with a tetragonal crystalline structure on the semiconductor substrate. Related structures are also discussed.