The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2007

Filed:

Jan. 19, 2005
Applicants:

Jae-hyun Yeo, Bucheun-si, KR;

Young-wook Park, Suwon-si, KR;

Ki-chul Kim, Sungnam-si, KR;

Jae-jong Han, Seoul, KR;

Inventors:

Jae-Hyun Yeo, Bucheun-si, KR;

Young-Wook Park, Suwon-si, KR;

Ki-Chul Kim, Sungnam-si, KR;

Jae-Jong Han, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.


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