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For the Inventor, By the Inventor

Seoul, South Korea

Jae-Jong Han

USPTO Granted Patents = 19

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 71(Granted Patents)


Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2018

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19 patents (USPTO):
1. 9859376 - Semiconductor device and method of fabricating the same (2018-01-02),
2. 9202844 - Semiconductor devices having blocking layers and methods of forming the same (2015-12-01),
3. 8987694 - Semiconductor devices having a vertical diode and methods of manufacturing the same (2015-03-24),
4. 8497545 - Method of forming nonvolatile memory device having floating gate and related device (2013-07-30),
5. 8241979 - Method of forming a vertical diode and method of manufacturing a semiconductor device using the same (2012-08-14),
6. 7888204 - Method of forming nonvolatile memory device having floating gate and related device (2011-02-15),
7. 7803679 - Method of forming a vertical diode and method of manufacturing a semiconductor device using the same (2010-09-28),
8. 7763550 - Method of forming a layer on a wafer (2010-07-27),
9. 7273822 - Methods and apparatus for forming thin films for semiconductor devices (2007-09-25),
10. 7118975 - Method for manufacturing a semiconductor device (2006-10-10),
11. 7091074 - Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same (2006-08-15),
12. 6881637 - Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate (2005-04-19),
13. 6828254 - Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same (2004-12-07),
14. 6815370 - Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same (2004-11-09),
15. 6794263 - Method of manufacturing a semiconductor device including alignment mark (2004-09-21),

Title: Jae-Jong Han: Innovator in Semiconductor Technology

Introduction

Jae-Jong Han is a prominent inventor based in Seoul, South Korea, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, he has made notable advancements in semiconductor devices, enhancing performance and efficiency.

Latest Patents

One of Jae-Jong Han's latest inventions is a semiconductor device and method of fabricating the same. This innovation encompasses a multi-channel active pattern that includes germanium, with an inner region and an outer region. Notably, the germanium fraction in the outer region is smaller than that in the inner region, while a gate electrode intersects the multi-channel active pattern. Another important patent involves a semiconductor device that includes a lower interconnection with second conductivity-type impurities residing on a substrate with first conductivity-type impurities. This device features a switching component and a first blocking layer made from carbon, germanium, or a combination thereof, enhancing its functionality.

Career Highlights

Throughout his career, Jae-Jong Han has made significant strides in semiconductor innovation. He has worked for esteemed companies such as Samsung Electronics Co., Ltd., where he contributed to cutting-edge technology in the electronics sector. His deep understanding of materials science and electronic engineering has been crucial in developing advanced semiconductor solutions.

Collaborations

Jae-Jong Han has collaborated with notable colleagues in his field, including Kong-Soo Lee and Seung-Mok Shin. These partnerships have fostered innovative research and development, leading to groundbreaking advancements in semiconductor device technology.

Conclusion

Jae-Jong Han's contributions to the semiconductor industry through his patent portfolio and collaborations demonstrate his commitment to innovation. As a leading inventor in this field, his work continues to influence the development of new technologies and improve existing semiconductor devices.

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