The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Oct. 23, 2002
Jae-Jong Han, Seoul, KR;
Kyoung-Seok Kim, Seoul, KR;
Byung-Ho Ahn, Gyeonggi-do, KR;
Seung Mok Shin, Suwon, KR;
Hwa-Sik Kim, Gyeonggi-do, KR;
Hong-Bae Park, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.