The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Jan. 07, 2011
Applicants:
Jung-geun Jee, Seoul, KR;
Ho-min Son, Suwon-si, KR;
Yong-woo Hyung, Yongin-si, KR;
Jae-jong Han, Seoul, KR;
Taek-jin Lim, Hwaseong-si, KR;
Inventors:
Jung-Geun Jee, Seoul, KR;
Ho-Min Son, Suwon-si, KR;
Yong-Woo Hyung, Yongin-si, KR;
Jae-Jong Han, Seoul, KR;
Taek-Jin Lim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.