The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Sep. 26, 2003
Jae-jong Han, Seoul, KR;
Yong-woo Hyung, Gyeonggi-do, KR;
Seung-mok Shin, Gyeonggi-do, KR;
Kong-soo Lee, Gyeonggi-do, KR;
Eun-jung Yun, Seoul, KR;
Jae-Jong Han, Seoul, KR;
Yong-Woo Hyung, Gyeonggi-do, KR;
Seung-Mok Shin, Gyeonggi-do, KR;
Kong-Soo Lee, Gyeonggi-do, KR;
Eun-Jung Yun, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In a method for forming a gate electrode having an excellent sidewall profile, after a gate structure is formed on a substrate, a first oxide film is formed on a sidewall of the gate structure and on the substrate by re-oxidizing the gate structure and the substrate under an atmosphere including an oxygen gas and an inert gas. The gate structure has a gate oxide film pattern, a polysilicon film pattern and a metal silicide film pattern. A portion of the first oxide film formed on a sidewall of the polysilicon film pattern has a thickness substantially identical to that of a portion of the first oxide film formed on a sidewall of the metal silicide film pattern. A failure of a semiconductor device having the gate electrode can be minimized because the gate electrode has an improved sidewall profile.