Suwon, South Korea

Seung-Mok Shin

This inventor holds 10 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung-Mok Shin. Retrieved from https://idiyas.com/inventor/seung-mok-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 70.0

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 79(Granted Patents)


Location History:

  • Kyunggi-do, KR (2001)
  • Gyeonggi-do, KR (2004 - 2005)
  • Suwon-Si, KR (2004 - 2008)
  • Seoul, KR (2013)
  • Yongin-si, KR (2009 - 2016)

Company Filing History:


Years Active: 2001-2016

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10 patents (USPTO):Explore Patents

Title: Innovations of Seung-Mok Shin in Vertical Memory Devices

Introduction

Seung-Mok Shin is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, particularly in vertical memory technology. With a total of 10 patents to his name, Shin's work has been instrumental in advancing semiconductor technology.

Latest Patents

One of his latest patents focuses on vertical memory devices and methods of manufacturing them. In this innovative method, insulation layers and sacrificial layers are alternately and repeatedly formed on a substrate. A hole is created through these layers, exposing the top surface of the substrate. The interior portion of the hole may then be enlarged, allowing for the formation of a semiconductor pattern that partially fills this enlarged section. A blocking layer, a charge storage layer, and a tunnel insulation layer are subsequently formed on the sidewall of the hole and the semiconductor pattern. The tunnel insulation layer, charge storage layer, and blocking layer are partially removed to reveal the top surface of the semiconductor pattern. Finally, a channel is formed on this exposed surface, and the sacrificial layers are replaced with gate electrodes.

Another notable patent by Shin is for a vertical non-volatile memory device. This device includes a semiconductor pattern situated on a substrate, along with multiple transistors stacked on the side of the semiconductor pattern at predetermined distances. These transistors are insulated from one another by air gaps, enhancing the device's efficiency and performance.

Career Highlights

Seung-Mok Shin is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has not only contributed to the company's advancements but has also set new standards in the industry.

Collaborations

Shin has collaborated with notable colleagues, including Jae-Jong Han and Kyung-Tae Jang. Their combined expertise has fostered a productive environment for innovation and development in memory devices.

Conclusion

Seung-Mok Shin's contributions to vertical memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to advancing technology and improving memory device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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