The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Feb. 23, 2004
Sang-hoon Lee, Uiwang-si, KR;
Hun-hyeoung Leam, Yongin-si, KR;
Seung-mok Shin, Suwon-si, KR;
Woo-sung Lee, Yongin-si, KR;
Sang-Hoon Lee, Uiwang-si, KR;
Hun-Hyeoung Leam, Yongin-si, KR;
Seung-Mok Shin, Suwon-si, KR;
Woo-Sung Lee, Yongin-si, KR;
Abstract
In accordance with a method of trench isolation, a first oxide layer is formed on a semiconductor substrate. A first conductive layer and a nitride layer are successively formed on the first oxide layer. The nitride layer, the first conductive layer and the first oxide layer are etched to form a nitride layer pattern, a first conductive layer pattern and an oxide layer pattern. A portion of the substrate adjacent to the first conductive layer pattern is etched to form a trench in the substrate. The trench is cured under dinitrogen monoxide (NO) or nitrogen monoxide(NO) atmosphere. A second oxide layer is formed in the trench through an in-situ process.