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For the Inventor, By the Inventor

Seoul, South Korea

Eun-jung Yun

This inventor holds 47 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eun-jung Yun. Retrieved from https://idiyas.com/inventor/eun-jung-yun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 72.3

Average Co-Inventor Count = 3.8

ph-index = 13

Forward Citations = 857(Granted Patents)


Location History:

  • Yongin-si, KR (2007)
  • Seoul, KR (2005 - 2014)

Company Filing History:

goldMedal47 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2014

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Areas of Expertise:
Gate-All-Around
Electromechanical Memory
Multibit Memory
FinFET
MOS Transistors
Nonvolatile Memory
3D Flash Memory
Stacked Memory Cells
Field Effect Transistors
Crystal Semiconductor Layer
Schottky Barrier
Vertical Twin-Channel
47 patents (USPTO):Explore Patents
1. 8835993 - Gate-all-around integrated circuit devices (2014-09-16),
2. 8222067 - Method of manufacturing multibit electro-mechanical memory device having movable electrode (2012-07-17),
3. 8198704 - Semiconductor device including a crystal semiconductor layer (2012-06-12),
4. 8179711 - Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell (2012-05-15),
5. 8168492 - Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same (2012-05-01),
6. 8129800 - Gate-all-around integrated circuit devices (2012-03-06),
7. 8129777 - Semiconductor device having a multi-channel type MOS transistor (2012-03-06),
8. 7973343 - Multibit electro-mechanical memory device having cantilever electrodes (2011-07-05),
9. 7972914 - Semiconductor device with FinFET and method of fabricating the same (2011-07-05),
10. 7943998 - Nonvolatile memory devices having stacked structures and methods of fabricating the same (2011-05-17),
11. 7911011 - Methods of fabricating electromechanical non-volatile memory devices (2011-03-22),
12. 7897463 - Methods of fabricating vertical twin-channel transistors (2011-03-01),
13. 7851287 - Method of fabricating Schottky barrier FinFET device (2010-12-14),
14. 7821821 - Multibit electro-mechanical device and method of manufacturing the same (2010-10-26),
15. 7803697 - Highly integrated semiconductor device and method of fabricating the same (2010-09-28),

Title: Eun-jung Yun: Innovator from Seoul, KR

Introduction

Eun-jung Yun is a prominent inventor based in Seoul, South Korea, recognized for his groundbreaking contributions to the field of integrated circuit technology. With a remarkable portfolio of 47 patents, Eun-jung has made significant strides in enhancing the functionality and efficiency of electronic devices.

Latest Patents

Among his latest innovations, Eun-jung developed the "Gate-all-around integrated circuit devices." This technology features first and second source/drain regions on the active area of an integrated circuit substrate, forming p-n rectifying junctions with the active area. A channel region extends between these source and drain regions, and an insulated gate electrode encompasses the channel region, marking a pivotal advancement in semiconductor design.

Another noteworthy patent is the "Method of manufacturing multibit electro-mechanical memory device having a movable electrode." This invention encompasses a sophisticated design comprising a substrate with a bit line, lower word lines separated by a trench, and suspended cantilever electrodes, all of which work in harmony to enhance the performance of memory devices.

Career Highlights

Eun-jung Yun is affiliated with Samsung Electronics Co., Ltd., where he has been instrumental in spearheading innovative projects that push the boundaries of current technology. His extensive experience and deep understanding of integrated circuits and memory devices position him as a leader in the semiconductor industry.

Collaborations

Throughout his career, Eun-jung has collaborated with fellow inventors, including Sung-Min Kim and Sung-young Lee. These partnerships have enabled him to pool expertise and resources, resulting in innovative solutions that benefit the electronics market.

Conclusion

Eun-jung Yun’s contributions to the field of innovation reflect his dedication and expertise in integrated circuit technology. His patents not only advance the capabilities of electronic devices but also demonstrate the importance of collaboration in achieving technological breakthroughs. As he continues to innovate, Eun-jung remains a significant figure in the landscape of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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